XP162A11C0PR-G mosfet equivalent, power mosfet.
Low On-State Resistance : Rds(on)=0.15Ω@Vgs=-10V
: Rds(on)=0.28Ω@Vgs=-4.5V
Ultra High-Speed Switching
Driving Voltage
: -4.5V
Gate Protect Diode Built-in
P-Channel.
*Notebook PCs
*Cellular and portable phones
*On-board power supplies
*Li-ion battery systems
*PIN CO.
The XP162A11C0PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in .
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