XP162A12A6PR-G datasheet, mosfet equivalent, Torex

Features and benefits

Low On-State Resistance : Rds(on)=0.17Ω@Vgs=-4.5V : Rds(on)=0.3ΩVgs=-2.5V Ultra High-Speed Switching Driving Voltage : -2.5V Gate Protect Diode Built-in P-Channel .

Application

*Notebook PCs
*Cellular and portable phones
*On-board power supplies
*Li-ion battery systems
*FEATU.

Description

The XP162A12A6PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in .

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