TDM4953 mosfet equivalent, p-channel enhancement mode mosfet.
* VDS = -30V,ID = -5.1A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired
*.
GENERAL FEATURES
* VDS = -30V,ID = -5.1A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V
* High Power and .
The TDM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* VDS = -30V,ID =.
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