TDM3426B mosfet equivalent, n-channel enhancement mode mosfet.
* RDS(ON) < 16mΩ @ VGS=4.5V RDS(ON) < 10mΩ @ VGS=10V
* High Power and current handling capability
* Lead free product is available
* Surface Mount .
GENERAL FEATURES
* RDS(ON) < 16mΩ @ VGS=4.5V RDS(ON) < 10mΩ @ VGS=10V
* High Power and current handling c.
The TDM3426B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* RDS(ON) < 16mΩ @ VGS=4.5V .
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