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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM950N10CW Datasheet

N-Channel Power MOSFET

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TSM950N10CW
Taiwan Semiconductor
N-Channel Power MOSFET
100V, 6.5A, 95mΩ
FEATURES
Fast switching
Pb-free plating
RoHS compliant
Halogen-free mold compound
APPLICATION
Networking
Load Switch
Lighting
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
RDS(on) (max)
VGS = 10V
VGS = 4.5V
Qg
100
95
110
9.3
V
mΩ
nC
SOT-223
Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS 100
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
VGS
ID
IDM
±20
6.5
4.1
26
Total Power Dissipation @ TC = 25°C
PDTOT
9
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
UNIT
V
V
A
A
W
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
14 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJC is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air
1 Version: D1807


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM950N10CW Datasheet

N-Channel Power MOSFET

No Preview Available !

TSM950N10CW
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN
Static (Note 3)
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA
BVDSS
100
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1.2
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
Zero Gate Voltage Drain Current
VDS = 100V, VGS = 0V
IDSS
--
Drain-Source On-State Resistance
Dynamic (Note 4)
VGS = 10V, ID = 5A
VGS = 4.5V, ID = 3A
RDS(on)
--
--
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 48V, ID = 5A,
VGS = 10V
Qg --
Qgs --
Qgd --
Input Capacitance
Ciss --
Output Capacitance
VDS = 50V, VGS = 0V, Coss --
f = 1.0MHz
Reverse Transfer Capacitance
Crss --
Gate Resistance
Switching (Note 5)
f = 1MHz, open drain Rg --
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode (Note 3)
VDD = 30V,
RGEN = 3.3Ω,
ID = 1A, VGS = 10V,
td(on)
tr
td(off)
tf
--
--
--
--
Forward On Voltage
Continuous Drain-Source Diode
IS = 3.3A, VGS = 0V
Pulse Drain-Source Diode
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
3. Pulse test: PW 300µs, duty cycle 2%
4. For DESIGN AID ONLY, not subject to production testing.
5. Switching time is essentially independent of operating temperature.
VSD
IS
ISM
--
--
--
TYP
--
1.6
--
--
80
85
9.3
2.1
1.8
1480
480
35
1.3
2.9
9.5
18.4
5.3
--
--
--
MAX UNIT
--
2.5
±100
1
95
110
V
V
nA
µA
mΩ
--
-- nC
--
--
-- pF
--
-- Ω
--
--
ns
--
--
1V
6.5 A
26 A
2 Version: D1807


Part Number TSM950N10CW
Description N-Channel Power MOSFET
Maker Taiwan Semiconductor
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