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TSM950N10 - N-Channel Power MOSFET

General Description

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No license, express or implied, to any intellectual property rights is granted by this document.

Key Features

  • 100% avalanche tested.
  • Fast switching.
  • Pb-free plating.
  • RoHS compliant.
  • Halogen-free mold compound.

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TSM950N10 Taiwan Semiconductor N-Channel Power MOSFET 100V, 6.5A, 95mΩ FEATURES ● 100% avalanche tested ● Fast switching ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound APPLICATION ● Networking ● Load Switch ● Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.5V Qg 100 95 110 9.3 V mΩ nC SOT-223 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C VGS ID IDM ±20 6.5 4.