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TSM900N06CW - N-Channel Power MOSFET

Key Features

  • 100% UIS and Rg tested.
  • Logic-level gate drive.
  • Fast switching.
  • RoHS Compliant.
  • Halogen-Free according to IEC 61249-2-21.

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Other Datasheets by Taiwan Semiconductor

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TSM900N06CW Taiwan Semiconductor N-Channel Power MOSFET 60V, 6A, 90mΩ FEATURES ● 100% UIS and Rg tested ● Logic-level gate drive ● Fast switching ● RoHS Compliant ● Halogen-Free according to IEC 61249-2-21 APPLICATIONS ● DC-DC Converters ● Solenoid and Motor Drivers PRODUCT SUMMARY PARAMETER VALUE VDS 60 VGS = 10V 90 RDS(on) (max) VGS = 4.5V 126 Qg VGS = 10V 11 UNIT V mΩ nC SOT-223 Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current (Note 1) TC = 25°C 6 ID TC = 100°C 4 Pulsed Drain Current (Note 2) IDM 24 Single Pulse Avalanche Current (Note 3) IAS 4.