TSM3N90 datasheet, mosfet equivalent, Taiwan Semiconductor

Features and benefits

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* Low RDS(ON) 4.3Ω (Typ.) Low gate charge typical @ 17nC (Typ.) Low Crss typical @ 8.7pF (Typ.) Block Diagram Ordering Information Part No. TSM3N90CH C5.

Application

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Description

TO-251 (IPAK) TO-252 (DPAK) The TSM3N90 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig.

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