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TSM300NB06CR - N-Channel Power MOSFET

Key Features

  • Low RDS(ON) to minimize conductive losses.
  • Low gate charge for fast power switching.
  • 100% UIS and Rg tested.
  • 175°C Operating Junction Temperature.
  • Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 KEY.

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Full PDF Text Transcription for TSM300NB06CR (Reference)

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TSM300NB06CR Taiwan Semiconductor N-Channel Power MOSFET 60V, 27A, 30mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● ...

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nimize conductive losses ● Low gate charge for fast power switching ● 100% UIS and Rg tested.

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