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TSM210N06 Datasheet, Taiwan Semiconductor

TSM210N06 mosfet equivalent, n-channel power mosfet.

TSM210N06 Avg. rating / M : 1.0 rating-12

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TSM210N06 Datasheet

Features and benefits


* Advanced Trench Technology
* Low RDS(ON) 3.1mΩ (Max.)
* Low gate charge typical @ 160nC (Typ.)
* Low Crss typical @ 300pF (Typ.) Ordering Information .

Application

Customers using or selling these products for use in such applications do so at their own risk and agree to fully indem.

Description

only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or impli.

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TAGS

TSM210N06
N-Channel
Power
MOSFET
TSM210N02CX
TSM200
TSM200N03D
Taiwan Semiconductor

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