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* Low RDS(ON) 0.3Ω (Max.) Low gate charge typical @ 54nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM20N50CN C0 Pack.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully indem.

The TSM20N50CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ene.

TSM20N50CN

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