TSM1NB60S datasheet, mosfet equivalent, Taiwan Semiconductor

Features and benefits

*
*
* Low RDS(ON) 8Ω (Typ.) Low gate charge typical @ 6.1nC (Typ.) Low Crss typical @ 4.2pF (Typ.) Block Diagram Ordering Information Part No. TSM1NB60SCT B.

Application

Customers using or selling these products for use in such applications do so at their own risk and agree to fully indem.

Description

The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the aval.

Image gallery