TSM1NB60 Datasheet, Taiwan Semiconductor

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* Low RDS(ON) 8Ω (Typ.) Low gate charge typical @ 6.1nC (Typ.) Low Crss typical @ 4.2pF (Typ.) Block Diagram Ordering Information Part No. TSM1NB60CH C5.

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The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avala.