TSM1N60S mosfet equivalent, 600v n-channel power mosfet.
* Robust high voltage termination
* Avalanche energy specified
* Diode is characterized for use in bridge circuits
* Source to Drain d.
in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits whe.
The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. T.
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