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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM120NA03CR Datasheet

N-Channel Power MOSFET

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TSM120NA03CR
Taiwan Semiconductor
N-Channel Power MOSFET
30V, 39A, 11.7mΩ
FEATURES
Low RDS(ON) to minimize conductive loss
Low gate charge for fast power switching
100% UIS and Rg tested
Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
DC-DC Converters
Battery Power Management
ORing FET/Load Switch
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
RDS(on)
(max)
VDS
VGS = 10V
VGS = 4.5V
Qg
30
11.7
14.9
4.5
V
mΩ
nC
PDFN56
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current
Single Pulse Avalanche Current (Note 2)
Single Pulse Avalanche Energy (Note 2)
TC = 25°C
TA = 25°C
VDS
VGS
ID
IDM
IAS
EAS
30
±20
39
11
156
15.6
36.5
Total Power Dissipation
TC = 25°C
TC = 125°C
Total Power Dissipation
TA = 25°C
TA = 125°C
Operating Junction and Storage Temperature Range
PD
PD
TJ, TSTG
33
6.6
2.6
0.5
- 55 to +150
UNIT
V
V
A
A
A
mJ
W
W
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
3.8 °C/W
Junction to Ambient Thermal Resistance
RӨJA
48 °C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
1 Version: B1610


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM120NA03CR Datasheet

N-Channel Power MOSFET

No Preview Available !

TSM120NA03CR
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µ A
BVDSS
VGS(TH)
30
1.2
Gate-Source Leakage Current
Drain-Source Leakage Current
Drain-Source On-State Resistance
(Note 3)
Forward Transconductance (Note 3)
Dynamic (Note 4)
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = 30V
VGS = 0V, VDS = 30V
TJ = 125°C
VGS = 10V, ID = 11A
VGS = 4.5V, ID = 11A
VDS = 5V, ID = 11A
IGSS
IDSS
RDS(on)
gfs
--
--
--
--
--
--
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching (Note 4)
VGS = 10V, VDS = 15V,
ID = 11A
VGS = 4.5V, VDS = 15V,
ID = 11A
VGS = 0V, VDS = 15V
f = 1.0MHz
f = 1.0MHz
Qg
Qg
Qgs
Qgd
Ciss
Coss
Crss
Rg
--
--
--
--
--
--
--
0.5
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VGS = 10V, VDS = 15V,
ID = 7A, RG = 10Ω,
td(on)
tr
td(off)
tf
--
--
--
--
Source-Drain Diode
Forward Voltage (Note 3)
VGS = 0V, IS = 11A
VSD
Reverse Recovery Time
Reverse Recovery Charge
IS = 11A ,
dI/dt = 100A/μs
trr
Qrr
Notes:
1. Silicon limited current only.
2. L = 0.3mH, VGS = 10V, VDS = 25V, RG = 25Ω, IAS = 15.6A, Starting TJ = 25°C
3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
4. Switching time is essentially independent of operating temperature.
--
--
--
TYP
--
1.9
--
--
--
8.3
11.9
35
9.2
4.5
1.9
1.7
562
144
50
1.7
8.4
4.3
22.4
3.1
--
14.7
7.3
MAX UNIT
--
2.5
±100
1
100
11.7
14.9
--
V
V
nA
µA
mΩ
S
--
-- nC
--
--
--
-- pF
--
3.4 Ω
--
--
ns
--
--
1.2 V
-- ns
-- nC
ORDERING INFORMATION
PART NO.
TSM120NA03CR RLG
PACKAGE
PDFN56
PACKING
2,500pcs / 13Reel
2 Version: B1610


Part Number TSM120NA03CR
Description N-Channel Power MOSFET
Maker Taiwan Semiconductor
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