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OP509A - NPN Silicon Phototransistor

Download the OP509A datasheet PDF. This datasheet also covers the OP508FA variant, as both devices belong to the same npn silicon phototransistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The OP508FA consists of an NPN silicon phototransistor mounted in a flat, black plastic “end-looking” package.

The flat sensing surface allows an acceptance half-angle of 60° when measured from the optical axis to the half power point.

Key Features

  • Flat lensed for wide acceptance angle (OP508F).
  • Lensed for high sensitivity (OP509).
  • Easily stackable on 0.100” (2.54 mm) hole centers.
  • Inexpensive plastic package.
  • Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes OP508 OP509.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (OP508FA-TT.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NPN Silicon Phototransistor OP508FA, OP509A, OP509B Obsolete (OP508FC, OP509C) Features: • Flat lensed for wide acceptance angle (OP508F) • Lensed for high sensitivity (OP509) • Easily stackable on 0.100” (2.54 mm) hole centers • Inexpensive plastic package • Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes OP508 OP509 Description: The OP508FA consists of an NPN silicon phototransistor mounted in a flat, black plastic “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optical axis to the half power point. Each device in the OP509 series consists of an NPN silicon phototransistor mounted in a lensed, clear plastic “end-looking” package.