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OP509B - NPN Silicon Phototransistor

This page provides the datasheet information for the OP509B, a member of the OP508FA NPN Silicon Phototransistor family.

Datasheet Summary

Description

The OP508FA consists of an NPN silicon phototransistor mounted in a flat, black plastic “end-looking” package.

The flat sensing surface allows an acceptance half-angle of 60° when measured from the optical axis to the half power point.

Features

  • Flat lensed for wide acceptance angle (OP508F).
  • Lensed for high sensitivity (OP509).
  • Easily stackable on 0.100” (2.54 mm) hole centers.
  • Inexpensive plastic package.
  • Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes OP508 OP509.

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Datasheet preview – OP509B

Datasheet Details

Part number OP509B
Manufacturer TT
File Size 747.99 KB
Description NPN Silicon Phototransistor
Datasheet download datasheet OP509B Datasheet
Additional preview pages of the OP509B datasheet.

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Full PDF Text Transcription

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NPN Silicon Phototransistor OP508FA, OP509A, OP509B Obsolete (OP508FC, OP509C) Features: • Flat lensed for wide acceptance angle (OP508F) • Lensed for high sensitivity (OP509) • Easily stackable on 0.100” (2.54 mm) hole centers • Inexpensive plastic package • Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes OP508 OP509 Description: The OP508FA consists of an NPN silicon phototransistor mounted in a flat, black plastic “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optical axis to the half power point. Each device in the OP509 series consists of an NPN silicon phototransistor mounted in a lensed, clear plastic “end-looking” package.
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