* Simplified Amplifier Design
* Suitable for Broad Band Applications
* Low Crss
* Simple Bias Circuits
* Low Noise
* High Gain
  – .

* Low Crss
* Simple Bias Circuits
* Low Noise
* High Gain
  – 11dB Minimum
* RoHS Comp.

Single-Ended RF Silicon Mosfet. 15W at 500MHz, 12.5V Absolute Maximum Ratings (TA = 25°C unless otherwise noted) PD Power Dissipation BVDSS Drain
  – Source Breakdown Voltage BVGSS Gate
  – Source Breakdown Voltage.

D2290UK

D2293UK

D2200

D2200N

D2201

D2201N

D2201UK

D2202

D2202UK

D2203UK

D2204

D2204UK

D2205UK

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