D2294UK Datasheet, TT

* Simplified Amplifier Design
* Suitable for Broad Band Applications
* Low Crss
* Simple Bias Circuits
* Low Noise
* High Gain
  – .

* Low Crss
* Simple Bias Circuits
* Low Noise
* High Gain
  – 11dB Minimum
* RoHS Comp.

Single-Ended RF Silicon Mosfet. 15W at 500MHz, 12.5V Absolute Maximum Ratings (TA = 25°C unless otherwise noted) PD Power Dissipation BVDSS Drain
  – Source Breakdown Voltage BVGSS Gate
  – Source Breakdown Voltage.