* Simplified Amplifier Design
* Suitable for Broad Band Applications
* Low Crss
* Simple Bias Circuits
* Low Noise
* High Gain
  – .

* Low Crss
* Simple Bias Circuits
* Low Noise
* High Gain
  – 13dB Minimum
* RoHS Comp.

Single-Ended RF Silicon Mosfet. 5W at 500MHz, 28V Absolute Maximum Ratings (TA = 25°C unless otherwise noted) PD Power Dissipation BVDSS Drain
  – Source Breakdown Voltage BVGSS Gate
  – Source Breakdown Voltage I.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts