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40H12K Datasheet, TGD

40H12K mosfet equivalent, n-channel enhancement mode power mosfet.

40H12K Avg. rating / M : 1.0 rating-18

datasheet Download (Size : 1.20MB)

40H12K Datasheet

Features and benefits


* VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage an.

Application

General Features
* VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V
* High density cell desi.

Description

The TGD40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V <.

Image gallery

40H12K Page 1 40H12K Page 2 40H12K Page 3

TAGS

40H12K
N-Channel
Enhancement
Mode
Power
MOSFET
TGD

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