Datasheet4U Logo Datasheet4U.com

40H20AD - N-Channel Enhancement Mode Power MOSFET

Description

The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.0mΩ).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Schematic diagram.

📥 Download Datasheet

Datasheet Details

Part number 40H20AD
Manufacturer OuCan
File Size 283.77 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet 40H20AD Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
40H000F TC40H000F Toshiba
40H12K N-Channel Enhancement Mode Power MOSFET TGD
40H192 TC40H192 Toshiba
40HF POWER RECTIFIER GOOD-ARK Electronics
40HF STANDARD RECOVERY DIODES International Rectifier

Other Datasheets by OuCan

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQB200N04 N-Channel Enhancement Mode Power MOSFET Description The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V (Typ:2.
Published: |