40H20AD mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V
(Typ:2.0mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rds.
General Features
* VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V
(Typ:2.0mΩ)
* Special process technology for.
The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V
(Typ:2.0mΩ)
* Spe.
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