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40H12K - N-Channel Enhancement Mode Power MOSFET

Description

The TGD40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =40V,ID =120A RDS(ON).

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Datasheet Details

Part number 40H12K
Manufacturer TGD
File Size 1.20 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet 40H12K Datasheet

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    Taiwan Goodark Technology Co.,Ltd TGD40H12K TGD N-Channel Enhancement Mode Power MOSFET Description The TGD40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.
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