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TEMIC
Siliconix
SUP/SUB50N06-18
N-Channel Enhancement-Mode lransistor
175°C Maximum Junction Temperature
Product Summary
V(BR)DSS (V) 60
rDS(on) (Q) 0.018
ID (A) 48
TO-220AB
D
o TO-263
DRAIN connected to TAB
GDS ThpView SUP50N06·18
G DS ThpView
SUB50N06-18
S N·Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain·Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175'C)
Tc=25'C Tc = 100'C
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy"
L=O.lmH
Power Dissipation
TC = 25'C (TO-220AB and TO·263) TA = 25'C (TO.263)b
Operating Junction and Storage Thmperature Range
VDS VGS
ID
IDM IAR EAR
Po
TJ, Tstg
60 V
±20
48
34 A
240
60
90
mJ
83 W
3.
SUB50N06-18 Datasheet
