2N7002E mosfet equivalent, mosfet.
* High density cell design for low RDS(ON).
* Voltage controlled small signal switch
* Rugged and reliable
* High saturation current capability
* RoHS.
Drain-Source Voltage Drain-Gate Voltage (RGS ≤1MΩ) Gate-Source Voltage Continuous Gate-Source Voltage Non Repetitive (tp <50µs) Drain Current Continuous Drain Current Pulsed
PD Total Power Dissipation
TJ TSTG RθJA
Junction Temperature Storage Temp.
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