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VN1710 - N-Channel Enhancement-Mode Vertical DMOS Power FETs

Download the VN1710 datasheet PDF. This datasheet also covers the VN1706 variant, as both devices belong to the same n-channel enhancement-mode vertical dmos power fets family and are provided as variant models within a single manufacturer datasheet.

Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VN1706-Supertex.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VN1710
Manufacturer Supertex
File Size 113.34 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet VN1710 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VN1710L N-Channel Enhancement-Mode MOS Transistors Siliconix
VN1710M N-Channel Enhancement-Mode MOS Transistors Siliconix
VN1706B N-Channel Enhancement-Mode MOS Transistors Siliconix
VN1706D N-Channel Enhancement-Mode MOS Transistors Siliconix
VN1706L N-Channel Enhancement-Mode MOS Transistors Siliconix

Other Datasheets by Supertex

Part Number Description
VN1706 N-Channel Enhancement-Mode Vertical DMOS Power FETs
VN10KN9 N-Channel Enhancement Mode Vertical D-MOS FETs
VN13A N-Channel Enhancement-Mode Vertical DMOS Power FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
4 "-11 !iupertex inc. VN1706 VN1710 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVoas 170V 170V ROS(ON) (max) Srl 100 IO(ON) (min) 1.0A 1.0A TO-39 Order Number I Package TO-92 TO-220 VN170SB VN170SL VN170SD VN1710B VN1710L VN1710D Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Applications o Motor control o Converters o Amplifiers o Switches o Power supply circuits o Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.
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