* 650V @TJ = 150°C
* Typ. RDS(on) = 0.16 
* Ultra Low Gate Charge (typ. Qg = 70nC)
* 100% avalanche tested D GDS TO-220 GD S TO-220F G S Absolute .

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss,.

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