F6N60 irf6n60 equivalent, irf6n60.
Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized f.
in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits whe.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation .
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