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Silicon N-Channel Power MOSFET
○R
F601D-G
Features：
l N-Channel l ESD improved Capability l Depletion Mode l dv/dt rated l Pb-free lead plating; ROHS compliant l Halogen Free Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSX
ID
IDMa1 VGS dv/dt a2 PD
VESD(G-S)
TJ，Tstg
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC =70 °C Pulsed Drain Current Gate-to-Source Voltage Peak Diode Recovery dv/dt Power Dissipation Gate source ESD (HBM-C= 100pF, R=1.5kΩ) Operating Junction and Storage Temperature Range
VDSX IDSS,min RDS(ON),max
600 0.012 300
Rating
600 0.030 0.024 0.120 ±20
5.0 0.
F601D-G Datasheet
