PIN CONFIGURATION TO220-3L FEATURE 80V/40.0A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V Super high density cell design for extr.

STN80T08 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO220-3L FEATURE 80V/40.0A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V Super high dens.

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