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ST1004SRG - N-Channel Enhancement Mode MOSFET

Description

ST1004SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

The process is especially to improve the overall efficiency of DC/DC conventional switching PWM controllers.

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Datasheet Details

Part number ST1004SRG
Manufacturer Stanson Technology
File Size 1.24 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST1004SRG Datasheet

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Full PDF Text Transcription

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ST1004SRG N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION ST1004SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The process is especially to improve the overall efficiency of DC/DC conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on) and fast switching speed. PIN CONFIGURATION SOT-23 3 D G S 1 2 FEATURE 100V/1.0A, RDS(ON) = 310mΩ @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 104YA 1 2 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
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