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ST1002 - N-Channel Enhancement Mode MOSFET

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Description

The ST1002 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ST1002
Manufacturer Stanson Technology
File Size 714.01 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST1002 Datasheet
Additional preview pages of the ST1002 datasheet.

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ST1002 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST1002 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching. PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 FEATURE 100V/3.0A, RDS(ON) = 135mΩ @VGS = 10V 100V/2.5A, RDS(ON) = 140mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 1.Gate 2.Source 3.
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