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SSM9926A
Comman Drain Dual N-Channel Enhancement Mode MOSFET
Product Summary
8
SOP-8
7 6 5
VDS (V)
ID (A)
RDS(ON) (m ) Max 30 @VGS = 4.0V
20V
6A 40 @VGS = 2.5V
1
2
3 4
D1 (7, 8)
D2 (5, 6)
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. SOP-8 package. Pb Free.
S1(1) G1 (2) G2 (4) S2(3)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
20 10 6 35 1.7 2 -55 to 150
Unit
V V A A A W
o
Drain-Source Diode Forward Current Maximum Power Dissipation
a
IS PD TJ, TSTG
Operating Junction and Storage Temperature Range
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
R
JA
62.
SSM9926A Datasheet
