SSM8405
Dual Enhancement Mode MOSFET
Product Summary (N-Channel)
VDS (V)
30V
SO-8
7 6 5
ID (A)
7A
RDS(ON) (mΩ) Max 25 @VGS = 10V 35 @VGS = 5V 40 @VGS = 4.5V
1 2 3
D1 (7,8)
D2 (5,6)
Product Summary (P-Channel)
VDS (V) ID (A)
RDS(ON) (mΩ) Max 45 @VGS =
- 10V
- 30V
- 5A 75 @VGS =
- 5V 90 @VGS =
- 4.5V
S1 (1) S2 (3) G1 (2) G2 (4)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ Ta -Pulsed b o
Symbol
VDS VGS 25 C 70 C o o
N-Channel P-Channel Limited Limited
Unit
30 +
- 25 7 6 30 1.6 2.0 1.44
-30 +
- 25 -5 -4.5 -20 -1.6 W o
ID IDM
Drain-Source Diode Forward Current Maximum Power Dissipation a a o
IS Ta=25 C Ta=70 C o
PD TJ,...
