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CME7660-000 - Silicon Schottky Barrier Diode Bondable Chips and Beam Leads

Description

Skyworks beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in the Ka band.

They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.

Features

  • Available in both P-type and N-type low barrier designs.
  • Low 1/f noise.
  • Large bond pad chip design.
  • Planar passivated beam-lead and chip construction.

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Datasheet Details

Part number CME7660-000
Manufacturer Skyworks
File Size 582.87 KB
Description Silicon Schottky Barrier Diode Bondable Chips and Beam Leads
Datasheet download datasheet CME7660-000 Datasheet

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Other Datasheets by Skyworks

Part Number Description
CME7660-203 Silicon Schottky Barrier Diodes
CME7660-207 Silicon Schottky Barrier Diodes

Full PDF Text Transcription (Reference)

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DATA SHEET Silicon Schottky Barrier Diode Bondable Chips and Beam Leads Applications  Detectors  Mixers Features  Available in both P-type and N-type low barrier designs  Low 1/f noise  Large bond pad chip design  Planar passivated beam-lead and chip construction Description Skyworks beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available.
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