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CME7660-207 - Silicon Schottky Barrier Diodes

Download the CME7660-207 datasheet PDF. This datasheet also covers the CME7660-203 variant, as both devices belong to the same silicon schottky barrier diodes family and are provided as variant models within a single manufacturer datasheet.

Description

Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band.

They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.

Features

  • Available in both P-type and N-type low barrier designs.
  • Low 1/f noise.
  • Packages rated MSL1, 260 C per JEDEC J-STD-020.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CME7660-203-Skyworks.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CME7660-207
Manufacturer Skyworks
File Size 578.69 KB
Description Silicon Schottky Barrier Diodes
Datasheet download datasheet CME7660-207 Datasheet

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Other Datasheets by Skyworks

Part Number Description
CME7660-203 Silicon Schottky Barrier Diodes
CME7660-000 Silicon Schottky Barrier Diode Bondable Chips and Beam Leads

Full PDF Text Transcription

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DATA SHEET Silicon Schottky Barrier Diodes in Hermetic and Epoxy Ceramic Packages Applications  Detectors  Mixers Features  Available in both P-type and N-type low barrier designs  Low 1/f noise  Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available.
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