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SPB-3018Z - Medium Power Active Bias InGaP/GaAs HBT Amplifier

Download the SPB-3018Z datasheet PDF. This datasheet also covers the SPB-3018 variant, as both devices belong to the same medium power active bias ingap/gaas hbt amplifier family and are provided as variant models within a single manufacturer datasheet.

Description

The SPB-3018 is high-efficiency InGaP/GaAs Heterojuction Bipolar Transistor (HBT) amplifier RFIC.

This amplifier incorporates an on-chip Class AB bias circuit which provides excellent efficiency while maintaining good linearity.

Features

  • Efficiency Available in Lead Free, RoHS compliant, & Green packaging Efficient Class AB operation P1dB = 30 dBm @ 1960MHz High Linearity/ACP performance Robust 1000V ESD, Class 1C MSL 1 moisture rating Power shutdown using VPC (less than 5uA IDQ) 15 12.5 10 7.5 5 2.5 0 15 16 17 18 19 20 21 22 23 24 ACP -50 -55 -60 -65 -70 -75.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SPB-3018_SirenzaMicrodevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SPB-3018Z
Manufacturer Sirenza Microdevices
File Size 232.11 KB
Description Medium Power Active Bias InGaP/GaAs HBT Amplifier
Datasheet download datasheet SPB-3018Z Datasheet

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SPB-3018 Medium Power Active Bias InGaP/GaAs HBT Amplifier
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Product Description The SPB-3018 is high-efficiency InGaP/GaAs Heterojuction Bipolar Transistor (HBT) amplifier RFIC. This amplifier incorporates an on-chip Class AB bias circuit which provides excellent efficiency while maintaining good linearity. The on-chip bias also allows the device output power (and current) to drive up towards saturation as the input power increases. The SPB-3018 is an ideal choice for multi-carrier as well as digital wireless telecom or general wireless applications in the 400-2500 MHz range. This amplifier is a robust, reliable, and rugged part with Class 1C HBM ESD rating, low operating junction temperature (Tj<125 ºC at 85 ºC lead), and excellent moisture resistance (MSL 1).
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