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HUR830S - High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

Key Features

  • International standard package.
  • Planar passivated chips.
  • Very short recovery time.
  • Extremely low switching losses.
  • Low IRM-values.
  • Soft recovery behaviour.

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Datasheet Details

Part number HUR830S
Manufacturer Sirectifier Semiconductors
File Size 269.21 KB
Description High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Datasheet download datasheet HUR830S Datasheet

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Other Datasheets by Sirectifier Semiconductors

Part Number Description
HUR830 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR820 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HUR830S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode C(TAB) A A NC www.DataSheet4U.com A=Anode, Dimensions TO-263(D2PAK) C Dim. A A1 b b2 c c2 D D1 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 NC= No connection, TAB=Cathode E E1 e L L1 L2 L3 L4 R 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029 HUR830S VRSM V 300 VRRM V 300 1. 2. 3. 4.