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RTM2301 - 20V N-Channel Enhancement Mode MOSFET

Key Features

  • — — Advanced trench process technology High density cell design for ultra low on-resistance — — Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. RTM2301CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta = 75 C Operating Junction Temper.

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Datasheet Details

Part number RTM2301
Manufacturer Sirectifier Global
File Size 206.86 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet RTM2301 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com E L E C T R O N I C RTM2301 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190mΩ Features — — Advanced trench process technology High density cell design for ultra low on-resistance — — Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No.