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RTM2302 - 20V N-Channel Enhancement Mode MOSFET

Features

  • — Advanced trench process technology High density cell design for ultra low on-resistance — — Excellent thermal and electrical capabilities Compact and low profile SOT-23 package — Block Diagram Ordering Information Part No. RTM2302CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation unless otherwise noted) Symbol VDS VGS ID IDM Ta = 25 C Ta = 75 C o.

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Datasheet Details

Part number RTM2302
Manufacturer Sirectifier Global
File Size 206.29 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet RTM2302 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com E L E C T R O N I C RTM2302 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.6A = 65mΩ RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 95mΩ Features — Advanced trench process technology High density cell design for ultra low on-resistance — — Excellent thermal and electrical capabilities Compact and low profile SOT-23 package — Block Diagram Ordering Information Part No. RTM2302CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation unless otherwise noted) Symbol VDS VGS ID IDM Ta = 25 C Ta = 75 C o o Limit 20V ±8 2.4 10 1.25 0.
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