Datasheet4U Logo Datasheet4U.com

SED3030M - N-Channel MOSFET

Download the SED3030M datasheet PDF. This datasheet also covers the SED3030M-Sino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

  • For a single MOSFET.
  • VDS = 30V.
  • RDS(ON) = 7.4mΩ@VGS=10V Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Symbol VDS VGS ID PD EAS TJ Rating 30 ±20 30 80 40 72 -55 to 175 Units V V A W mJ ℃ Typ Max Units.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SED3030M-Sino-IC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SED3030M
Manufacturer Sino-IC
File Size 494.34 KB
Description N-Channel MOSFET
Datasheet download datasheet SED3030M Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SED30KB45 POWER SCHOTTKY DIODE SSDI
SED30KE45 POWER SCHOTTKY DIODE SSDI
SED30KE600 HYPER FAST RECTIFIER SSDI
SED30KW600 HYPER FAST RECTIFIER SSDI
SED10HB45 (SED10HB45 / SED10HE45) SCHOTTKY RECTIFIER SSDI

Other Datasheets by Sino-IC

Part Number Description
SED4060G N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SED3030M N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application Features For a single MOSFET  VDS = 30V  RDS(ON) = 7.4mΩ@VGS=10V Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Symbol VDS VGS ID PD EAS TJ Rating 30 ±20 30 80 40 72 -55 to 175 Units V V A W mJ ℃ Typ Max Units - 3 ℃/W ShangHai Sino-IC Microelectronics Co., Ltd. 1.
Published: |