SED3030M datasheet, mosfet equivalent, Sino-IC

Features and benefits

For a single MOSFET
* VDS = 30V
* RDS(ON) = 7.4mΩ@VGS=10V Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-S.

Description

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application Features For a single MOSFET
* VDS = 30V
* RDS(ON) = 7.4mΩ@VGS=10V Pin configurations Se.

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