SSIG20N135H - MOSFET

Silikron Semiconductor

General Description

It utilizes the latest processing techniques to achieve the high cell density and reduces VCE(sat) rating.

Key Features

Advanced Trench-FS Process Technology.
Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A.
Fast Switching.
High Input Impedance.
Pb- Free Product.
Power Switch Circuit of Induction Cooker TO-247 SSIG20N135H Schematic diagram.

📥 Download Datasheet

SSIG20N135H mosfet by Silikron Semiconductor - Datasheet Preview

Datasheet Details

Part number	SSIG20N135H
Manufacturer	Silikron Semiconductor
File Size	589.57 KB
Description	MOSFET
Datasheet	SSIG20N135H Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SSIG3xxx	(SSIx xxxx) Standard Rectifier Diodes	Siemens
SSI10N60B	600V N-Channel MOSFET	Fairchild Semiconductor
SSI122	4-Channel Thin Film Read/Write Device	Silicon Systems
SSI1N50B	520V N-Channel MOSFET	Fairchild Semiconductor
SSI1N60A	Advanced Power MOSFET	Fairchild Semiconductor

Other Datasheets by Silikron Semiconductor

Part Number	Description
SSIG15N135H	MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100°C Features and Benefits:  Advanced Trench-FS Process Technology  Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A  Fast Switching  High Input Impedance  Pb- Free Product  Power Switch Circuit of Induction Cooker TO-247 SSIG20N135H Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces VCE(sat) rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application of induction cooker and a wide variety of other applications.