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SSIG20N135H Datasheet, Silikron Semiconductor

SSIG20N135H mosfet equivalent, mosfet.

SSIG20N135H Avg. rating / M : 1.0 rating-12

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SSIG20N135H Datasheet

Features and benefits


* Advanced Trench-FS Process Technology
* Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A
* Fast Switching
* High Input Impedance
.

Application

Absolute max Rating: Symbol IC @ TC = 25°C IC @ TC = 100°C ICM PD @TC = 25°C VCES VGES TJ TSTG TL Parameter Continuo.

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces VCE(sat) rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application of induction cook.

Image gallery

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TAGS

SSIG20N135H
MOSFET
SSIG15N135H
SSIG3xxx
SSI10N60B
Silikron Semiconductor

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