Datasheet4U Logo Datasheet4U.com

SSI10N60B - 600V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology.

Features

  • 9.0A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
  • ◀ ▲.
  • G S D2-PAK SSW Series G D S I2-PAK SSI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuo.

📥 Download Datasheet

Datasheet preview – SSI10N60B

Datasheet Details

Part number SSI10N60B
Manufacturer Fairchild Semiconductor
File Size 723.13 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet SSI10N60B Datasheet
Additional preview pages of the SSI10N60B datasheet.

📁 Similar Datasheet

  • SSI122 - 4-Channel Thin Film Read/Write Device (Silicon Systems)
  • SSI2007 - Power MOSFET (SeCoS)
  • SSI2007 - N- and P-Channel 20V MOSFET (VBsemi)
  • SSI204 - LOW POWER DTMF RECEIVER (Silicon Systems)
  • SSI2085E-C - N & P-Ch Enhancement Mode Power MOSFET (SeCoS)
  • SSI20N5E-C - Dual N-Ch Enhancement Mode Power MOSFET (SeCoS)
  • SSI2154 - 800mA 20V Dual N-Channel MOSFET (SeCoS Halbleitertechnologie)
  • SSI263A - Phoneme Speech synthesizer (Silicon Systems)
  • SSI3139J-C - Dual P-Ch Enhancement Mode Power MOSFET (SeCoS)
  • SSI318-C - Dual N-Channel MOSFET (SeCoS)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
SSW10N60B / SSI10N60B November 2001 SSW10N60B / SSI10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features • • • • • • 9.0A, 600V, RDS(on) = 0.
Published: |