SSF6014J7 Datasheet, Silikron Semiconductor

PQFN 5x6
* Advanced MOSFET process technology
* Special designed for PWM, load switching and general purpose applications
* Ultra low on-resistance with lo.

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 175℃ operating t.

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power.