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SSF6014J8 - MOSFET

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • DFN3.3x3.3 Bottom view.
  • Advanced trench MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSF6014J8
Manufacturer Silikron Semiconductor
File Size 806.25 KB
Description MOSFET
Datasheet download datasheet SSF6014J8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics: VDSS 60V RDS(on) ID 16mΩ (typ.) 22A Features and Benefits: DFN3.3x3.3 Bottom view  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSF6014J8 Pin Assignment Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.