SSF3341L datasheet, mosfet equivalent, Silikron Semiconductor

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Features and benefits

* VDS = -30V,ID = -4.2A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VGS=-10V
* High Power and current handing capability
* Lead fr.

Application

GENERAL FEATURES
* VDS = -30V,ID = -4.2A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VG.

Description

The SSF3341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES
* VDS = -30V,ID .

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