SSF4N60 Datasheet | Silikron

Features - Extremely high dv/dt capability - Low Gate Charge Qg results in Simple Drive Requirement - 100% avalanche tested - Gate charge minimized - Very low intrinsic capacitances - Very good manufacturing repeatability Vdss = 600V Id = 4A Rdson = 2.3Ω (typ.) Description The SSF4N60 is a new generation of high voltage N- Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density. Application - High...