SSF4N60G - N-Channel MOSFET

This page provides the datasheet information for the SSF4N60G, a member of the SSF4N60G-GOOD N-Channel MOSFET family.

Datasheet Summary

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

TO-251.
Advanced MOSFET process technology.
Special designed for PWM, load switching and general purpose.

GOOD-ARK

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Datasheet Details

Part number	SSF4N60G
Manufacturer	GOOD-ARK
File Size	906.82 KB
Description	N-Channel MOSFET
Datasheet	SSF4N60G Datasheet
Additional preview pages of the SSF4N60G datasheet.

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Full PDF Text Transcription

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Main Product Characteristics VDSS 600V RDS(on) 1.85Ω (typ.) ID 4A Features and Benefits TO-251  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF4N60G 600V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Published: Oct 11, 2016 |