TO220F
* Advanced MOSFET process technology
* Special designed for PWM, load switching and general purpose applications
* Ultra low on-resistance with low .

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating t.

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts