VQ2001J transistors equivalent, p-channel enhancement-mode mos transistors.
D High-Side Switching D Low On-Resistance: 1.5 W D Moderate Threshold:
–3.1 V D Fast Switching Speed: 17 ns D Low Input Capacitance: 60 pF
Benefits
D Eas.
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
D Battery Operated Systems D Power S.
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