Datasheet4U Logo Datasheet4U.com

VNDQ09 - N-Channel Enhancement-Mode MOSFET

Features

  • . nII Low rDS(on) < 4 TYPE Single Quad.

📥 Download Datasheet

Datasheet Details

Part number VNDQ09
Manufacturer Siliconix
File Size 257.47 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet VNDQ09 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VND05B DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY STMicroelectronics
VND05BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY STMicroelectronics
VND10B DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY STMicroelectronics
VND10BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY STMicroelectronics
VND10N06 fully autoprotected Power MOSFET STMicroelectronics

Other Datasheets by Siliconix

Part Number Description
VNDQ03 N-Channel Enhancement-Mode MOSFET
VNDQ06 N-Channel Enhancement-Mode MOSFET
VNDQ12 N-Channel Enhancement-Mode MOSFET
VNDQ20 N-Channel Enhancement-Mode MOSFET
VNDB24 N-Channel Enhancement-Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
~SilicDnix ~ incorporated VNDQ09 N·Channel Enhancement·Mode MOSFET DESIGNED FOR: GI Switching • Amplification FEATURES .nII Low rDS(on) < 4 TYPE Single Quad PACKAGE DEVICE TO-20SAD • VN90AB 2N6661 TO-92 • VNOBOBL TO-237 • VNOBOBM TO-220SD • VNBBAFD TO-220 • VNBBAD 14-Pin Plastic • VQ1006J 14-Pin Dual-In- Line e VQ1004P GEOMETRY DIAGRAM Gate Pad 0.010 (0.254) MQl!L (0.2209) Source Pad 0.0070 (0.1778) ~ (0.254) T 0.038 (0.965) 1 III 7-133 VNDQ09 TYPICAL. CHARACTERISTICS Output Characteristics I1.25 V~s =10 ~ 1.00 { 0.75 10 (A) 0.50 0.25 rt SV 5V 4V 3V _ 2V a a 10 20 30 40 50 VOS (V) ~SiliCDnix ~ incorporated Ohmic Region Characteristics 1.0 TJ =25°C VGs= 10~ 4=- L""O.B / ~ J._ / ~ 5V VVO.S / ~~ 4V 10 (A) 0.4 ~ ~ ~ i""""'" j~ ", ~~ 0.
Published: |